VISHAY SQD50034EL_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD50034EL_GE3

No reviews yet — be the first to review VISHAY SQD50034EL_GE3.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)90nC@10V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.1nF

Technical details

60V 100A 2.5V 107W 4mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs