VISHAY SQD45P03-12-T4_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD45P03-12-T4_GE3

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Specifications

Gate Charge(Qg)83nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)770pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)590pF
RDS(on)10mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.495nF
TypeP-Channel

Technical details

30V 50A 2.5V 48W 10mΩ@10V 1 P-Channel P-Channel TO-252AA Single FETs, MOSFETs RoHS

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