VISHAY SQD45P03-12_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD45P03-12_GE3

No reviews yet — be the first to review VISHAY SQD45P03-12_GE3.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)83nC@10V
Output Capacitance(Coss)770pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)590pF
RDS(on)24mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.495nF
TypeP-Channel

Technical details

P-Channel 30V 50A 48W Surface Mount TO-252AA

Related FETs & Power MOSFETs