VISHAY SQD40P10-40L_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD40P10-40L_GE3

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Specifications

Configuration-
Gate Charge(Qg)96nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)301pF
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)208pF
RDS(on)48mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.433nF

Technical details

P-Channel 100V 38A 136W Surface Mount TO-252

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