VISHAY · FETs & Power MOSFETs · MPN SQD40N10-25_GE3
No reviews yet — be the first to review VISHAY SQD40N10-25_GE3.
| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| RDS(on) | 25mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.38nF |
100V 40A 2.5V 136W 25mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS