VISHAY SQD40N06-14L_T4GE3

VISHAY · FETs & Power MOSFETs · MPN SQD40N06-14L_T4GE3

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Specifications

Gate Charge(Qg)51nC
Drain to Source Voltage60V
Output Capacitance(Coss)385pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)17mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.105nF
TypeN-Channel

Technical details

60V 40A 2.5V 75W 17mΩ@4.5V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS

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