VISHAY SQD40131EL_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD40131EL_GE3

No reviews yet — be the first to review VISHAY SQD40131EL_GE3.

Specifications

Gate Charge(Qg)115nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)450pF
RDS(on)11.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.6nF

Technical details

P-Channel 40V 31A 20W Surface Mount TO-252

Related FETs & Power MOSFETs