VISHAY SQD40061EL_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD40061EL_GE3

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Specifications

Gate Charge(Qg)280nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.1nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)1nF
RDS(on)7.1mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)14.5nF
TypeP-Channel

Technical details

P-Channel 40V 100A 35W Surface Mount TO-252

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