VISHAY SQD40020EL_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD40020EL_GE3

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Specifications

Gate Charge(Qg)165nC@20V
Drain to Source Voltage40V
Output Capacitance(Coss)1.931nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)2.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.8nF
TypeN-Channel

Technical details

40V 100A 1.7V 107W 2.2mΩ@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS

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