VISHAY · FETs & Power MOSFETs · MPN SQD40020EL_GE3
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| Gate Charge(Qg) | 165nC@20V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.931nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 107W |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| RDS(on) | 2.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.8nF |
| Type | N-Channel |
40V 100A 1.7V 107W 2.2mΩ@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS