VISHAY · FETs & Power MOSFETs · MPN SQD30N05-20L_T4GE3
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| Drain to Source Voltage | 55V |
|---|---|
| Gate Charge(Qg) | 18nC@5V |
| Output Capacitance(Coss) | 255pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 26mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.175nF |
| Type | N-Channel |
55V 30A 2.5V 50W 26mΩ@4.5V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS