VISHAY SQD30N05-20L_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD30N05-20L_GE3

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Specifications

Drain to Source Voltage55V
Gate Charge(Qg)18nC@5V
Output Capacitance(Coss)203pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.175nF
TypeN-Channel

Technical details

N-Channel 55V 30A 50W Surface Mount TO-252

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