VISHAY · FETs & Power MOSFETs · MPN SQD25N15-52-T4_GE3
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| Gate Charge(Qg) | 51nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 270pF |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 107W |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF |
| RDS(on) | 52mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.2nF |
| Type | N-Channel |
150V 25A 4V 107W 52mΩ@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS