VISHAY · FETs & Power MOSFETs · MPN SQD25N06-22L_T4GE3
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 62W |
| RDS(on) | 22mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.975nF |
60V 25A 2.5V 62W 22mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS