VISHAY SQD10N30-330H-GE3

VISHAY · FETs & Power MOSFETs · MPN SQD10N30-330H-GE3

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Specifications

Gate Charge(Qg)47nC@10V
Drain to Source Voltage300V
Output Capacitance(Coss)112pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.4V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)330mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.19nF
TypeN-Channel

Technical details

N-Channel 300V 10A 107W Surface Mount TO-252

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