VISHAY · FETs & Power MOSFETs · MPN SQD10N30-330H_4GE3
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| Drain to Source Voltage | 300V |
|---|---|
| Gate Charge(Qg) | 47nC@10V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 107W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 330mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.19nF |
300V 10A 3.4V 107W 330mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS