VISHAY · FETs & Power MOSFETs · MPN SQD10950E_GE3
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| Drain to Source Voltage | 250V |
|---|---|
| Gate Charge(Qg) | 16nC@10V |
| Output Capacitance(Coss) | 308pF |
| Current - Continuous Drain(Id) | 11.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 62W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 162mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 785pF |
| Type | N-Channel |
250V 11.5A 3.5V 62W 162mΩ@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS