VISHAY · FETs & Power MOSFETs · MPN SQD100N03-3M4_GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 124nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 516pF |
| RDS(on) | 3.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.349nF |
30V 100A 3.5V 100W 3.4mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS