VISHAY · FETs & Power MOSFETs · MPN SQD100N02_3M5L4GE3
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 5.5nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 800pF |
| RDS(on) | 4.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.3nF |
| Type | N-Channel |
20V 100A 2.5V 83W 4.5mΩ@4.5V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS