VISHAY SQD07N25-350H_GE3

VISHAY · FETs & Power MOSFETs · MPN SQD07N25-350H_GE3

No reviews yet — be the first to review VISHAY SQD07N25-350H_GE3.

Specifications

Drain to Source Voltage250V
Gate Charge(Qg)29nC@10V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation71W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)350mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.205nF

Technical details

250V 7A 3.5V 71W 350mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs