VISHAY SQA602CEJW-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQA602CEJW-T1_GE3

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)8.2nC@10V
Current - Continuous Drain(Id)5.63A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation13.6W
RDS(on)94mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)355pF

Technical details

80V 5.63A 2.5V 13.6W 94mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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