VISHAY SQA470EJ-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQA470EJ-T1_GE3

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Specifications

Gate Charge(Qg)6nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)2.25A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation13.6W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)65mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)440pF

Technical details

30V 2.25A 600mV 13.6W 65mΩ@4.5V 1 N-channel SC-70-6L Single FETs, MOSFETs RoHS

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