VISHAY SQA444CEJW-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQA444CEJW-T1_GE3

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Specifications

Gate Charge(Qg)9nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)215pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation13.6W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)39mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)530pF
TypeN-Channel

Technical details

N-Channel 60V 9A 13.6W PowerPAKSC-70W-6L

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