VISHAY SQA442EJ-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQA442EJ-T1_GE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)9.7nC@10V
Output Capacitance(Coss)242pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation13.6W
Reverse Transfer Capacitance (Crss@Vds)18.3pF
RDS(on)32mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)636pF
TypeN-Channel

Technical details

N-Channel 60V 9A 13.6W Surface Mount PowerPAKSC-70-6

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