VISHAY SQA413CEJW-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQA413CEJW-T1_GE3

No reviews yet — be the first to review VISHAY SQA413CEJW-T1_GE3.

Specifications

Drain to Source Voltage20V
Gate Charge(Qg)16nC@4.5V
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation13.6W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)38mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.35nF

Technical details

P-Channel 20V 7.5A 13.6W Surface Mount SC-70-6(SOT-363)

Related FETs & Power MOSFETs