VISHAY SQA410CEJW-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQA410CEJW-T1_GE3

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Specifications

Gate Charge(Qg)8nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)7.8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation13.6W
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)38mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)525pF
TypeN-Channel

Technical details

N-Channel 20V 7.8A 13.6W Surface Mount PowerPAK-SC-70-6-Dual

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