VISHAY · FETs & Power MOSFETs · MPN SQ9945BEY-T1_BE3
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| Current - Continuous Drain(Id) | 5.4A |
|---|---|
| Pd - Power Dissipation | 4W |
| RDS(on) | 64mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 470pF |
| Gate Charge(Qg) | 12nC@10V |
| Operating Temperature | -55℃~+175℃ |
5.4A 4W 64mΩ@10V 2.5V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS