VISHAY SQ9407EY-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ9407EY-T1_GE3

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)4.6A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.75W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)85mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.14nF
TypeP-Channel

Technical details

P-Channel 60V 4.6A 3.75W Surface Mount SO-8

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