VISHAY · FETs & Power MOSFETs · MPN SQ9407EY-T1_BE3
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 4.6A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.75W |
| RDS(on) | 85mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.14nF |
60V 4.6A 2.5V 3.75W 85mΩ@10V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS