VISHAY · FETs & Power MOSFETs · MPN SQ4949EY-T1_GE3
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| Current - Continuous Drain(Id) | 7.5A |
|---|---|
| Pd - Power Dissipation | 3.3W |
| RDS(on) | 65mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 30V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.02nF |
| Gate Charge(Qg) | 30nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 210pF |
7.5A 3.3W 65mΩ@4.5V 2.5V 2 P-Channel SOIC-8 FET, MOSFET Arrays RoHS