VISHAY · FETs & Power MOSFETs · MPN SQ4920EY-T1_GE3
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| Current - Continuous Drain(Id) | 8A |
|---|---|
| Pd - Power Dissipation | 4.4W |
| RDS(on) | 17.5mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.465nF |
| Gate Charge(Qg) | 30nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 280pF |
8A 4.4W 17.5mΩ@4.5V 2.5V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS