VISHAY · FETs & Power MOSFETs · MPN SQ4917EY-T1_GE3
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| Current - Continuous Drain(Id) | 8A |
|---|---|
| RDS(on) | 48mΩ@10V |
| Pd - Power Dissipation | 5W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.91nF |
| Gate Charge(Qg) | 65nC@10V |
| Operating Temperature | -55℃~+175℃ |
P-Channel 60V 8A 5W Surface Mount SO-8