VISHAY · FETs & Power MOSFETs · MPN SQ4917CEY-T1_GE3
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| Current - Continuous Drain(Id) | 8A |
|---|---|
| Pd - Power Dissipation | 1.67W |
| RDS(on) | 48mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 142pF |
| Input Capacitance(Ciss) | 1.91nF |
| Gate Charge(Qg) | 65nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 417pF |
P-Channel 60V 8A 1.67W Surface Mount SO-8