VISHAY · FETs & Power MOSFETs · MPN SQ4532AEY-T1_GE3
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| Current - Continuous Drain(Id) | 7.3A;5.3A |
|---|---|
| RDS(on) | 31mΩ@10V;70mΩ@10V |
| Pd - Power Dissipation | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 535pF;528pF |
| Gate Charge(Qg) | 7.8nC@10V;10.2nC@10V |
| Operating Temperature | -55℃~+175℃ |
2V 1 N-Channel + 1 P-Channel SO-8 FET, MOSFET Arrays RoHS