VISHAY SQ4435EY-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQ4435EY-T1_BE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)58nC@10V
Output Capacitance(Coss)490pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation6.8W
Reverse Transfer Capacitance (Crss@Vds)335pF
RDS(on)31mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.17nF
TypeP-Channel

Technical details

30V 15A 2.5V 6.8W 31mΩ@4.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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