VISHAY SQ4431EY-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ4431EY-T1_GE3

No reviews yet — be the first to review VISHAY SQ4431EY-T1_GE3.

Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)243pF
Current - Continuous Drain(Id)10.8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation6W
Reverse Transfer Capacitance (Crss@Vds)167pF
RDS(on)30mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.265nF
TypeP-Channel

Technical details

P-Channel 30V 10.8A 6W Surface Mount SO-8

Related FETs & Power MOSFETs