VISHAY · FETs & Power MOSFETs · MPN SQ4431EY-T1_BE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Current - Continuous Drain(Id) | 10.8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 167pF |
| RDS(on) | 52mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.265nF |
| Type | P-Channel |
30V 10.8A 2.5V 2W 52mΩ@4.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS