VISHAY · FETs & Power MOSFETs · MPN SQ4425EY-T1_BE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 50nC@4.5V |
| Output Capacitance(Coss) | 660pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 6.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 525pF |
| RDS(on) | 19mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.63nF |
| Type | P-Channel |
30V 18A 2.5V 6.8W 19mΩ@4.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS