VISHAY · FETs & Power MOSFETs · MPN SQ4410EY-T1_GE3
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| Gate Charge(Qg) | 53nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 20mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.385nF |
| Type | N-Channel |
30V 15A 2.5V 5W 20mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS