VISHAY · FETs & Power MOSFETs · MPN SQ4282EY-T1_GE3
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| Current - Continuous Drain(Id) | 8A |
|---|---|
| RDS(on) | 13.5mΩ@4.5V |
| Pd - Power Dissipation | 3.9W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 173pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.367nF |
| Gate Charge(Qg) | 47nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 495pF |
8A 13.5mΩ@4.5V 3.9W 2.5V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS