VISHAY SQ4282EY-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQ4282EY-T1_BE3

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Specifications

Current - Continuous Drain(Id)8A
RDS(on)21mΩ@10V
Pd - Power Dissipation3.9W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)173pF
Number2 N-Channel
Input Capacitance(Ciss)2.367nF
Gate Charge(Qg)47nC@10V
Operating Temperature-
Output Capacitance(Coss)495pF

Technical details

8A 21mΩ@10V 3.9W 2.5V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS

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