VISHAY · FETs & Power MOSFETs · MPN SQ4184EY-T1_GE3
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 7.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF |
| RDS(on) | 4.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.4nF |
N-Channel 40V 29A 7.1W Surface Mount SOIC-8