VISHAY · FETs & Power MOSFETs · MPN SQ4182EY-T1_GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 7.1W |
| RDS(on) | 3.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.4nF |
30V 32A 2.5V 7.1W 3.8mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS