VISHAY SQ4182EY-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQ4182EY-T1_BE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)110nC@10V
Output Capacitance(Coss)1.09nF
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation7.1W
Reverse Transfer Capacitance (Crss@Vds)390pF
RDS(on)5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.4nF
TypeN-Channel

Technical details

30V 32A 2.5V 7.1W 5mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS

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