VISHAY SQ4153EY-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQ4153EY-T1_BE3

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)151nC@4.5V
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation7.1W
Reverse Transfer Capacitance (Crss@Vds)3.6nF
RDS(on)8.32mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)11nF

Technical details

12V 25A 400mV 7.1W 8.32mΩ@4.5V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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