VISHAY · FETs & Power MOSFETs · MPN SQ4080EY-T1_BE3
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| Gate Charge(Qg) | 33nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 7.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 85mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.59nF |
150V 19A 3V 7.1W 85mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS