VISHAY · FETs & Power MOSFETs · MPN SQ4064EY-T1_GE3
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| Gate Charge(Qg) | 43nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 6.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF |
| RDS(on) | 19.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.096nF |
60V 12A 2.5V 6.8W 19.8mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS