VISHAY · FETs & Power MOSFETs · MPN SQ4050EY-T1_GE3
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| Gate Charge(Qg) | 51nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 6W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.406nF |
40V 19A 2.5V 6W 8mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS