VISHAY · FETs & Power MOSFETs · MPN SQ3989EV-T1_GE3
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| Current - Continuous Drain(Id) | 2.5A |
|---|---|
| RDS(on) | 155mΩ@10V |
| Pd - Power Dissipation | 560mW |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 30V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 11.1nC@10V |
| Operating Temperature | -55℃~+175℃ |
P-Channel 30V 2.5A 0.56W Surface Mount TSOP-6