VISHAY SQ3989EV-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQ3989EV-T1_BE3

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Specifications

Current - Continuous Drain(Id)2.5A
Pd - Power Dissipation1.67W
RDS(on)300mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 P-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)11.1nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)-

Technical details

2.5A 1.67W 300mΩ@4.5V 1.5V 2 P-Channel TSOP-6 FET, MOSFET Arrays RoHS

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