VISHAY SQ3987EV-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQ3987EV-T1_GE3

No reviews yet — be the first to review VISHAY SQ3987EV-T1_GE3.

Specifications

Current - Continuous Drain(Id)3A
RDS(on)85mΩ@10V;135mΩ@4.5V
Pd - Power Dissipation1.67W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)59pF
Number2 P-Channel
Input Capacitance(Ciss)456pF
Gate Charge(Qg)9.7nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)85pF

Technical details

P-Channel 30V 3A 1.67W Surface Mount TSOP-6

Related FETs & Power MOSFETs